Probing the electronic properties of CVD graphene superlattices

Twisted bilayer graphene (tBLG) presents electronic properties that depend on the relative misalignment and interaction between layers. Here, we studied chemical vapor deposited (CVD) monolayer graphene and tBLGs by Raman spectroscopy in order to estimate the twist angle. We also compared the transp...

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Published in2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) pp. 1 - 2
Main Authors Arezki, H., Boutchich, M., Jaffre, A., Alvarez, J., Chaste, J., Patriarche, G., Kleider, J-P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2016
Subjects
Copper
Electrodes
Graphene
Nanoscale devices
Raman scattering
Superlattices
Transmission electron microscopy
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Summary:Twisted bilayer graphene (tBLG) presents electronic properties that depend on the relative misalignment and interaction between layers. Here, we studied chemical vapor deposited (CVD) monolayer graphene and tBLGs by Raman spectroscopy in order to estimate the twist angle. We also compared the transport properties of a monolayer and a tBLG (θ > 20 °). We found that the tBLG superlattice exhibits a much lower carrier mobility of 60 cm 2 /Vs as opposed to 750 cm 2 /Vs for the undoped monolayer and 600 cm 2 /Vs for the monolayer (1ML) doped with AuCb nanocolloids. However the sheet resistance of the tBLG is the same order of magnitude compared to the doped 1ML ∼ of 400 Ω/sq thanks to a larger carrier density ∼ 2×10 14 cm- 2 . These superlattices may found interesting applications in transparent electrodes and nanoelectronic charge trapping devices.
DOI:10.1109/NMDC.2016.7777071