APA (7th ed.) Citation

Hellings, G., Mertens, H., Subirats, A., Simoen, E., Schram, T., Ragnarsson, L., . . . Horiguchi, N. (2018, June). Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology. 2018 IEEE Symposium on VLSI Technology, 85-86. https://doi.org/10.1109/VLSIT.2018.8510654

Chicago Style (17th ed.) Citation

Hellings, G., et al. "Si/SiGe Superlattice I/O FinFETs in a Vertically-stacked Gate-All-Around Horizontal Nanowire Technology." 2018 IEEE Symposium on VLSI Technology Jun. 2018: 85-86. https://doi.org/10.1109/VLSIT.2018.8510654.

MLA (9th ed.) Citation

Hellings, G., et al. "Si/SiGe Superlattice I/O FinFETs in a Vertically-stacked Gate-All-Around Horizontal Nanowire Technology." 2018 IEEE Symposium on VLSI Technology, Jun. 2018, pp. 85-86, https://doi.org/10.1109/VLSIT.2018.8510654.