Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology

This work presents Si/SiGe superlattice finFETs (FF) for 1.8V/2.5V I/O applications in vertically-stacked Gate-All-Around horizontal nanowire technology (hNW) technology. Superlattice FF have a higher ION than I/O hNW reference devices and can be more easily integrated into a GAA hNW technology than...

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Bibliographic Details
Published in2018 IEEE Symposium on VLSI Technology pp. 85 - 86
Main Authors Hellings, G., Mertens, H., Subirats, A., Simoen, E., Schram, T., Ragnarsson, L.-A., Simicic, M., Chen, S.-H., Parvais, B., Boudier, D., Cretu, B., Machillot, J., Pena, V., Sun, S., Yoshida, N., Kim, N., Mocuta, A., Linten, D., Horiguchi, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2018
Subjects
Electrostatic discharges
FinFETs
Ions
Logic gates
Silicon
Silicon germanium
Superlattices
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ISSN2158-9682
DOI10.1109/VLSIT.2018.8510654

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Summary:This work presents Si/SiGe superlattice finFETs (FF) for 1.8V/2.5V I/O applications in vertically-stacked Gate-All-Around horizontal nanowire technology (hNW) technology. Superlattice FF have a higher ION than I/O hNW reference devices and can be more easily integrated into a GAA hNW technology than Si I/O FF. These novel I/O FET structures exhibit competitive analog performance and are superior as ESD protection devices.
ISSN:2158-9682
DOI:10.1109/VLSIT.2018.8510654