Comparative study of Cu(In,Ga)Se-2/(PVD)In2S3 and Cu(In,Ga)Se-2/(CBD)CdS heterojunction based solar cells by admittance spectroscopy, current-voltage and spectral response measurements

Co-evaporated Cu(In,Ga)Se-2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/...

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Published inThin solid films Vol. 517; no. 7
Main Authors Darga, A., Mencaraglia, D., Djebbour, Z., Dubois, A.M., Chouffot, R., Serhan, J., Couzinie-Devy, F., Barreau, Nicolas, Kessler, John
Format Journal Article
LanguageEnglish
Published Elsevier 02.02.2009
Subjects
Condensed Matter
Materials Science
Physics
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Summary:Co-evaporated Cu(In,Ga)Se-2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the OVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV.
ISSN:0040-6090
DOI:10.1016/j.tsf.2008.11.017