Experimental gm/ID Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 65; no. 1
Main Authors El Ghouli, Salim, Rideau, Denis, Monsieur, Frederic, Scheer, Patrick, Gouget, Gilles, Juge, André, Poiroux, Thierry, Sallese, Jean-Michel, Lallement, Christophe
Format Journal Article
LanguageEnglish
Published Institute of Electrical and Electronics Engineers 01.01.2018
Subjects
Engineering Sciences
Micro and nanotechnologies
Microelectronics
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ISSN:0018-9383
DOI:10.1109/TED.2017.2772804