Structural and electrical properties of Ge-doped ZrO.sub.2 thin films grown by atomic layer deposition for high-k dielectrics

Enhancing the dielectric constant (k) of conventional gate dielectric materials such as HfO.sub.2 and ZrO.sub.2 is one of the important requirements for further scaling down of devices in future years. One promising approach for achieving this is to incorporate a specific element in the high-k host...

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Published inJournal of materials science Vol. 53; no. 21; pp. 15237 - 15245
Main Authors Park, Bo-Eun, Lee, Yujin, Oh, Il-Kwon, Noh, Wontae, Gatineau, Satoko, Kim, Hyungjun
Format Journal Article
LanguageEnglish
Published Springer 01.11.2018
Subjects
Dielectric materials
Electric properties
Electrical conductivity
Thin films
Zirconium
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Summary:Enhancing the dielectric constant (k) of conventional gate dielectric materials such as HfO.sub.2 and ZrO.sub.2 is one of the important requirements for further scaling down of devices in future years. One promising approach for achieving this is to incorporate a specific element in the high-k host material for stabilizing a particular higher-k crystalline phase. Although Ge has been theoretically suggested as a stabilizer for ZrO.sub.2, there are no experimental studies correlating the structure of ZrO.sub.2 films fabricated by atomic layer deposition (ALD) with their electrical properties. In this work, we systematically investigated the structural and electrical properties of Ge-doped ZrO.sub.2 films prepared by ALD. We used germanium butoxide (Ge(O.sup.nBu).sub.4) and Zr tris(dimethylamino)cyclopentadienyl zirconium as the Ge and Zr precursors, respectively, with O.sub.3 as a reactant. We controlled the ALD cycle ratio using a supercycle process (GeO.sub.2/ZrO.sub.2 = 1:128, 1:64, 1:32, 1:16, 1:8, 1:4, and 1:2) to produce the alloy films. Electrical properties of these samples were evaluated by measuring the electrical characteristics of metal-oxide-semiconductor (MOS) capacitors based on them, and the results are discussed together with crystallographic analysis. The results revealed that Ge incorporation into ZrO.sub.2 induced the stabilization of the cubic/tetragonal phase of the ZrO.sub.2 film at low temperatures and improved its dielectric properties. Consequently, this is a systematic and facile method to optimize the dielectric properties of Ge-doped ZrO.sub.2 prepared by varying the ALD cycle ratio, and these films could be applied in future nanoscale devices.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-018-2695-4