Interface structure between Bi and CdTe in molecular beam epitaxially grown Bi/CdTe and Bi/Bi(1-x)Sb(x) superlattices

• Published in: Journal of electronic materials Vol. 23; no. 12; pp. 1255 - 1259
• Main Authors: Chen, J, DiVenere, A, Yi, X J, Hou, C L, Wang, H C, Wong, G K, Ketterson, J B
• Format: Journal Article
• Language: English
• Published: 01.12.1994
• ISSN: 0361-5235
• DOI: 10.1007/BF02649887

We report cross-sectional high resolution TEM studies of the interface structure in Bi/CdTe and Bi/B(1-x)Sb(x) superlattice films deposited on (111) CdTe by MBE. Results show that the interface between Bi and CdTe is coherent. Two kinds of interfaces were observed. One is the so-called twin- or allo-interface, where the stacking sequence of Bi is different from or does not follow continuously that of CdTe. The lattice orientation across this kind of interface is similar to a (111) rotation twin as is commonly present in cubic semiconductors. The other is the so-called isointerface, where the stacking sequence of Bi follows the CdTe without any change. However, the presence of one kind of Bi twin boundary with translational characteristics indicates that it fits a model of random nucleation and 2D growth. (Author)