Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of [Bi.sub.2][Se.sub.3] and [Sb.sub.2][Te.sub.3] Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of [Bi.sub.2][Se.sub.3] and [Sb.sub.2][Te.sub.3] compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are...

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Published inJournal of experimental and theoretical physics Vol. 126; no. 4; pp. 535 - 1069
Main Authors Surnin, Yu.A, Klimovskikh, I.I, Sostina, D.M, Kokh, K.A, Tereshchenko, O.E, Shikin, A.M
Format Journal Article
LanguageEnglish
Published Springer 01.04.2018
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Summary:The effect of an ultrathin Pb film deposited on the surface of [Bi.sub.2][Se.sub.3] and [Sb.sub.2][Te.sub.3] compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776118040088