Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of [Bi.sub.2][Se.sub.3] and [Sb.sub.2][Te.sub.3] Topological Insulators
The effect of an ultrathin Pb film deposited on the surface of [Bi.sub.2][Se.sub.3] and [Sb.sub.2][Te.sub.3] compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are...
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Published in | Journal of experimental and theoretical physics Vol. 126; no. 4; pp. 535 - 1069 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Springer
01.04.2018
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Subjects | |
Online Access | Get full text |
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Summary: | The effect of an ultrathin Pb film deposited on the surface of [Bi.sub.2][Se.sub.3] and [Sb.sub.2][Te.sub.3] compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers. |
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ISSN: | 1063-7761 1090-6509 |
DOI: | 10.1134/S1063776118040088 |