Direct growth and properties of few-layer MoS.sub.2 on multilayer graphene prepared by chemical vapor deposition

• Published in: Journal of materials science Vol. 57; no. 42; pp. 19704 - 19715
• Main Authors: Sirat, Mohamad Shukri, Johari, Muhammad Hilmi, Mohmad, Abdul Rahman, Haniff, Muhammad Aniq Shazni Mohammad, Ani, Mohd Hanafi, Hussin, Mohd Rofei Mat, Mohamed, Mohd Ambri
• Format: Journal Article
• Language: English
• Published: Springer 01.11.2022
• Subjects: Chemical vapor deposition; Field-effect transistors; Graphene; Graphite; Transmission electron microscopes
• ISSN: 0022-2461
• DOI: 10.1007/s10853-022-07873-7

The distinctive properties of van der Waals heterostructures that combine two or more two-dimensional materials are of interest due to their potential for high-performance devices. Molybdenum disulfide (MoS.sub.2)/graphene has been shown as good photodetectors, sensors and field-effect transistors. However, the progress is restricted due to susceptibility of the single-layer MoS.sub.2/graphene to the substrate that affects its properties. Recently, few-layer (FL) MoS.sub.2 and multilayer (ML) graphene have shown a fairly good electrical performance. Here, a direct growth of FL MoS.sub.2 on the ML graphene approach in chemical vapor deposition is taken to synthesize FL MoS.sub.2/ML graphene heterostructure. A comprehensive study on the properties of the FL MoS.sub.2/ML graphene heterostructure is conducted. The Raman spectra indicate the presence of typical MoS.sub.2 peaks (E.sup.1.sub.2g and A.sub.1g modes) and graphene peaks (D, G and 2D bands). The slight graphene-peaks shift is related to the electron transfer from ML graphene to the FL MoS.sub.2, deducing a good interfacial interaction between both materials. Referring to the atomic force microscopy images, the thickness of the FL MoS.sub.2 and ML graphene is measured around 3 nm and 10 nm, respectively. The X-ray diffraction and transmission electron microscope indicate that the grown FL MoS.sub.2 is 3R-phase. Field-effect transistor based on the FL MoS.sub.2/ML graphene is fabricated and the estimated carrier mobility is around 1036 cm.sup.2 V.sup.-1 s.sup.-1. Our work highlights the necessity of utilizing FL MoS.sub.2/ML graphene for extensive fundamental and application studies.