Effect of the n- and p-type Si substrates with a sic buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

• Published in: Physics of the solid state pp. 1966 - 1971
• Main Authors: Bessolov, V.N, Grashchenko, A.S, Konenkova, E.V, Myasoedov, A.V, Osipov, A.V, Redkov, A.V, Rodin, S.N, Rubetsr, V.P, Kukushkin, S.A
• Format: Journal Article
• Language: English
• Published: Springer 01.10.2015
• Subjects: Aluminum compounds; Epitaxy; Liquors; Silicon compounds
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783415100042

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-- hydride epitaxy on silicon substrates has been proposed.