Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure

The results of studies of the current-voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 x 64 linear array based on p-InAsSbP/n-InAsSb/[n.sup.+]-InAs with the [n.sup.+]-InAs-substrate side illuminated and sensitive in the region of 4-µm are reported....

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Bibliographic Details
Published inSemiconductors (Woodbury, N.Y.) p. 646
Main Authors Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Format Journal Article
LanguageEnglish
Published Springer 01.05.2016
Subjects
Analysis
Lasers in medicine
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Summary:The results of studies of the current-voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 x 64 linear array based on p-InAsSbP/n-InAsSb/[n.sup.+]-InAs with the [n.sup.+]-InAs-substrate side illuminated and sensitive in the region of 4-µm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77-353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance-voltage measurements. DOI: 10.1134/S1063782616050122
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616050122