Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN

• Published in: Japanese Journal of Applied Physics Vol. 58; no. SC; p. SC1023
• Main Authors: Ohnishi, Kazuki, Kuboya, Shigeyuki, Tanikawa, Tomoyuki, Iwabuchi, Takuya, Yamamura, Kazuya, Hasuike, Noriyuki, Harima, Hiroshi, Fukuda, Tsuguo, Matsuoka, Takashi
• Format: Journal Article
• Language: English
• Published: Tokyo IOP Publishing 01.06.2019; Japanese Journal of Applied Physics
• Subjects: Dislocation density; Epitaxial growth; Flat surfaces; Gallium nitrides; Substrates; Threading dislocations; Vapor phase epitaxy; Vapor phases; Wafers

ScAlMgO4 (SCAM) substrates with a small lattice-mismatch to GaN and c-plane cleavability are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the fabrication of free-standing GaN wafers, the reuse of a SCAM substrate is demonstrated. By cleaving a SCAM substrate...