Reuse of ScAlMgO4 substrates utilized for halide vapor phase epitaxy of GaN

ScAlMgO4 (SCAM) substrates with a small lattice-mismatch to GaN and c-plane cleavability are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the fabrication of free-standing GaN wafers, the reuse of a SCAM substrate is demonstrated. By cleaving a SCAM substrate...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 58; no. SC; p. SC1023
Main Authors Ohnishi, Kazuki, Kuboya, Shigeyuki, Tanikawa, Tomoyuki, Iwabuchi, Takuya, Yamamura, Kazuya, Hasuike, Noriyuki, Harima, Hiroshi, Fukuda, Tsuguo, Matsuoka, Takashi
Format Journal Article
LanguageEnglish
Published Tokyo IOP Publishing 01.06.2019
Japanese Journal of Applied Physics
Subjects
Dislocation density
Epitaxial growth
Flat surfaces
Gallium nitrides
Substrates
Threading dislocations
Vapor phase epitaxy
Vapor phases
Wafers
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Summary:ScAlMgO4 (SCAM) substrates with a small lattice-mismatch to GaN and c-plane cleavability are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the fabrication of free-standing GaN wafers, the reuse of a SCAM substrate is demonstrated. By cleaving a SCAM substrate which has been already utilized for the growth of a thick GaN film by halide vapor phase epitaxy, the atomically flat surface can be obtained. The threading dislocation density of a 320 m thick GaN film grown on this cleaved SCAM substrate is 2.4 × 107 cm−2, which is almost the same as that on a new SCAM substrate. This result indicates that a SCAM substrate can be reused for GaN growth.
Bibliography:JJAP-s100196
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab06ab