ILGAR In2S3 buffer layers for Cd-free Cu(In,Ga)(S,Se)2 solar cells with certified efficiencies above 16
ABSTRACT In2S3 buffer layers have been prepared using the spray ion layer gas reaction deposition technique for chalcopyrite‐based thin‐film solar cells. These buffers deposited on commercially available Cu(In,Ga)(S,Se)2 absorbers have resulted in solar cells with certified record efficiencies of 16...
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Published in | Progress in photovoltaics Vol. 20; no. 7; pp. 855 - 861 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Bognor Regis
Blackwell Publishing Ltd
01.11.2012
Wiley Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
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Summary: | ABSTRACT
In2S3 buffer layers have been prepared using the spray ion layer gas reaction deposition technique for chalcopyrite‐based thin‐film solar cells. These buffers deposited on commercially available Cu(In,Ga)(S,Se)2 absorbers have resulted in solar cells with certified record efficiencies of 16.1%, clearly higher than the corresponding CdS‐buffered references. The deposition process has been optimized, and the resulting cells have been studied using current–voltage and quantum efficiency analysis and compared with previous record cells, cells with a thermally evaporated In2S3 buffer layer and CdS references. Copyright © 2012 John Wiley & Sons, Ltd.
New record efficiencies (independently confirmed by ISE) above 16% for chalcopyrite‐based thin‐film devices are presented using commercially available Cu(In,Ga)(S,Se)2 absorbers with In2S3 buffer layers deposited by spray ion layer gas reaction (ILGAR) provided by BOSCH Solar CISTech GmbH. The route followed to optimize the buffer layer and a statistical study comparing In2S3 with CdS references are shown. ILGAR In2S3 is an advantageous replacement for the standard CdS buffer layers. |
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Bibliography: | istex:39D6D104A85CB47D7FEB3722F64746C1D9F33827 ark:/67375/WNG-7G83C584-N ArticleID:PIP2268 |
ISSN: | 1062-7995 1099-159X |
DOI: | 10.1002/pip.2268 |