Improved stability and high thermoelectric performance through cation site doping in n-type La-doped Mg3Sb1.5Bi0.5

n-Type conduction in a Mg3Sb1.5Bi0.5 system is achieved with La-doping at cation sites with a peak zT > 1. La-doped samples exhibit much higher doping efficiency and dopability compared to other chalcogen-doped samples. This allows greater tunability of the electronic properties. La-doping also s...

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Bibliographic Details
Published inJournal of materials chemistry. A, Materials for energy and sustainability Vol. 6; no. 41; pp. 19941 - 19946
Main Authors Imasato, Kazuki, Wood, Max, Jimmy Jiahong Kuo, Snyder, G Jeffrey
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 2018
Subjects
Carrier density
Cations
Conduction
Doping
Thermal stability
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Summary:n-Type conduction in a Mg3Sb1.5Bi0.5 system is achieved with La-doping at cation sites with a peak zT > 1. La-doped samples exhibit much higher doping efficiency and dopability compared to other chalcogen-doped samples. This allows greater tunability of the electronic properties. La-doping also significantly improves the thermal stability of n-type Mg3Sb1.5Bi0.5 measured via a long-term Hall carrier concentration measurement.
ISSN:2050-7488
2050-7496
DOI:10.1039/c8ta08975b