Improved junction formation procedure for low temperature deposited CdS/CdTe solar cells

Thin films CdS/CdTe solar cells with high efficiencies above 15% were produced by vacuum evaporation at substrate temperatures lower than 400D degree C. The junction quality was found to be improved by introducing an In (or Sn)-oxide buffer layer on the transparent conducting oxide film, and V sub(o...

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Bibliographic Details
Published inSolar energy materials and solar cells Vol. 49; no. 1-4; pp. 219 - 225
Main Authors Takamoto, T, Agui, T, Kurita, H, Ohmori, M
Format Journal Article
LanguageEnglish
Published 01.12.1997
Subjects
Conductive films
Deposition
Energy conversion
Energy efficiency
Evaporation
Low temperature effects
Semiconductor junctions
Vacuum applications
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Summary:Thin films CdS/CdTe solar cells with high efficiencies above 15% were produced by vacuum evaporation at substrate temperatures lower than 400D degree C. The junction quality was found to be improved by introducing an In (or Sn)-oxide buffer layer on the transparent conducting oxide film, and V sub(oc) greater than 0.84 V and FF greater than 75% could be obtained. Furthermore, the two-step CdS formation method was found to be effective for obtaining high-efficiency cells on a sodalime glass.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0927-0248
DOI:10.1016/S0927-0248(97)00198-0