Anisotropic interfacial properties of monolayer C2N field effect transistors

• Published in: Physical chemistry chemical physics : PCCP Vol. 22; no. 48; pp. 28074 - 28085
• Main Authors: Mi-Mi Dong, Zhang, Guang-Ping, Zong-Liang, Li, Ming-Lang, Wang, Wang, Chuan-Kui, Xiao-Xiao, Fu
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 28.12.2020
• Subjects: Aluminum; Contact resistance; Copper; Density functional theory; Electrode materials; Electrodes; Fermi level; Field effect transistors; Graphene; Green's functions; Interfacial properties; Materials selection; Monolayers; Nickel; Optoelectronics; Photonic band gaps; Pinning; Platinum; Semiconductor devices; Silver; System effectiveness; Titanium; Transistors; Transport properties
• ISSN: 1463-9076; 1463-9084
• DOI: 10.1039/d0cp04450d

Monolayer C2N is promising for next-generation electronic and optoelectronic applications due to its appropriate band gap and high carrier efficiency. However, relative studies have been held back due to the lack of high-quality electrode contacts. Here, we comprehensively study the electronic and transport properties of monolayer C2N with a series of electrode materials (Al, Ti, Ni, Cu, Ag, Pt, V2C, Cr2C and graphene) by using the nonequilibrium Green's function (NEGF) method combined with density functional theory (DFT). The monolayer C2N forms Ohmic contacts with the Ti/Cu/Ag electrode material in both armchair and zigzag directions, whereas Ohmic contact is only formed in the zigzag direction of the C2N–Al field effect transistor. However, the C2N–Ni, –Pt, –V2C, –Mo2C, –graphene contact systems form n-type Schottky contacts in either the armchair or zigzag direction owing to the relatively strong Fermi level pinning (the pinning factor S = 0.32 in the armchair direction and S = 0.26 in the zigzag direction). By insertion of BN or graphene between the C2N and Pt electrode in the armchair direction of contact systems, the Fermi level pinning can be effectively weakened due to the suppression of metal-induced gap states. Conspicuously, an Ohmic contact is realized in the C2N field effect transistors with the BN–Pt electrode, suggesting a possible approach to fabricating high-performance devices. Our study is conducive to selecting appropriate electrode materials for C2N-based field effect transistors.