Preparation and characterization of Cu2ZnSnS4 thin films by two-stage process

Cu 2 ZnSnS 4 (CZTS) a quaternary semiconductor is potential candidate for absorber layer in thin-film heterojunction solar cell. Achieving CZTS thin films is really a challenging task using chemical methods. In this work, an attempt is made by mixing binary and ternary compound semiconducting films...

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Published inEnergy sources. Part A, Recovery, utilization, and environmental effects Vol. 41; no. 24; pp. 3001 - 3012
Main Authors D., Nagamalleswari, Y.B., Kishore Kumar, Y.B., Kiran, G., Suresh Babu
Format Journal Article
LanguageEnglish
Published Taylor & Francis 17.12.2019
Subjects
kesterite
solar cell absorber
spray pyrolysis
sulfurization
thin films
ZnSnS
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Summary:Cu 2 ZnSnS 4 (CZTS) a quaternary semiconductor is potential candidate for absorber layer in thin-film heterojunction solar cell. Achieving CZTS thin films is really a challenging task using chemical methods. In this work, an attempt is made by mixing binary and ternary compound semiconducting films for the growth of CZTS films. Initially, ZnS thin films have been deposited by spray pyrolysis technique onto soda-lime glass substrates held at a substrate temperature of 698 K. Later, copper tin sulfide (Cu 2 SnS 3 [CTS]), a ternary compound semiconducting film, has been deposited using spray pyrolysis technique onto ZnS-coated substrates held at a substrate temperature 598 K. For achieving CZTS films, ZnS/CTS films were annealed in sulfur ambiance at different annealing temperatures in a two-zone tubular quartz furnace. The structural, optical, electrical, and surface morphological studies are carried out for these thin films.
ISSN:1556-7036
1556-7230
DOI:10.1080/15567036.2019.1583294