Highly stable performance of flexible Hf0.6Zr0.4O2 ferroelectric thin films under multi-service conditions

The rapid development of the flexible electronics industry places higher demands on the performance of flexible ferroelectric memories. In practical work, environmental factors such as high temperature, radiation and humidity may also affect the lifetime of flexible devices besides electric field an...

Full description

Saved in:
Bibliographic Details
Published inJournal of materials chemistry. C, Materials for optical and electronic devices Vol. 8; no. 11; pp. 3878 - 3886
Main Authors Wen-Yan, Liu, Jia-Jia Liao, Jiang, Jie, Yi-Chun, Zhou, Chen, Qiang, Sheng-Tao, Mo, Yang, Qiong, Qiang-Xiang, Peng, Li-Mei, Jiang
Format Journal Article
LanguageEnglish
Published Cambridge Royal Society of Chemistry 21.03.2020
Subjects
Atomic layer epitaxy
Bending machines
Bending stresses
Electric fields
Endurance
Ferroelectric materials
Ferroelectricity
Flexible components
Hafnium oxide
High temperature
Mica
Service life assessment
Substrates
Thin films
Online AccessGet full text

Cover

More Information
Summary:The rapid development of the flexible electronics industry places higher demands on the performance of flexible ferroelectric memories. In practical work, environmental factors such as high temperature, radiation and humidity may also affect the lifetime of flexible devices besides electric field and bending stress. In this paper, Hf0.6Zr0.4O2 (HZO) ferroelectric thin film with excellent ferroelectric properties and high reliability was prepared on flexible mica substrate by atomic layer deposition (ALD). More importantly, the flexible HZO ferroelectric films maintain superior ferroelectricity, retention and fatigue endurance under multiple harsh conditions. On the basis of multi-service conditions, this work marks an important step in the development of new flexible HfO2-based ferroelectric memories from fundamental research to practical applications.
ISSN:2050-7526
2050-7534
DOI:10.1039/c9tc05157k