Structural properties of SnxSy thin films prepared by plasma-enhanced chemical vapor deposition

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 147; no. 10; pp. 3708 - 3717
Main Authors SANCHEZ-JUAREZ, A, ORTIZ, A
Format Journal Article
LanguageEnglish
Published Pennington, NJ Electrochemical Society 01.10.2000
Subjects
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Structure and morphology; thickness
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
Tin sulfides
Inorganic compounds
Crystallinity
Crystal growth from vapors
XRD
Experimental study
Lattice parameters
Preferred orientation
Optimization
Thin films
Sulfides
Fabrication structure relation
PECVD
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More Information
ISSN:0013-4651
1945-7111
DOI:10.1149/1.1393962