MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 6; no. 48; pp. 1325 - 13256
• Main Authors: Lee, Woongkyu, Cho, Cheol Jin, Lee, Woo Chul, Hwang, Cheol Seong, Chang, Robert P. H, Kim, Seong Keun
• Format: Journal Article
• Language: English
• Published: Cambridge Royal Society of Chemistry 01.01.2018
• Subjects: Annealing; Atomic layer epitaxy; Capacitors; Chemical properties; Computer memory; Electrode materials; Electrodes; High temperature; Molybdenum oxides; Noble metals; Organic chemistry; Random access memory; Rutile; Stability; Structural stability; Temperature; Thermal stability; Titanium dioxide
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/c8tc04167a

Metallic MoO 2 is proposed as a new oxide electrode for dynamic random-access memory (DRAM) capacitors. Although noble metal oxide electrodes including RuO 2 and SrRuO 3 have attracted interest as capacitor electrodes, these materials have critical instability problems of ease-of-reduction during the subsequent annealing process. In contrast, MoO 2 shows excellent thermal stability of the structural and chemical properties even after annealing at 400 °C in both forming gas and O 2 atmospheres. In addition, MoO 2 electrodes induce the formation of a high temperature phase with a high dielectric constant, rutile TiO 2 , by atomic layer deposition at the relatively low temperature of 250 °C because of the structural homogeneity between MoO 2 and rutile TiO 2 . These results demonstrate that MoO 2 could be a promising electrode material for DRAM capacitors. MoO 2 is a promising oxide electrode with excellent thermal stability for next-generation DRAM capacitors.