Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery

GaN is a durable, radiation hard and wide-bandgap semiconductor material, making it ideal for usage with betavoltaic batteries. This paper describes the design, fabrication and experimental testing of 1 cm2 GaN-based betavoltaic batteries (that achieve an output power of 2.23 nW) along with a full m...

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 51; no. 3
Main Authors Munson, C E, Gaimard, Q, Merghem, K, Sundaram, S, Rogers, D J, de Sanoit, J, Voss, P L, Ramdane, A, Salvestrini, J P, Ougazzaden, A
Format Journal Article
LanguageEnglish
Published IOP Publishing 24.01.2018
Subjects
battery
betavoltaic
Computer Science
Electric power
Electronics
Engineering Sciences
GaN
Modeling and Simulation
betavoltaic
{Ni}$63
battery
GaN
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Summary:GaN is a durable, radiation hard and wide-bandgap semiconductor material, making it ideal for usage with betavoltaic batteries. This paper describes the design, fabrication and experimental testing of 1 cm2 GaN-based betavoltaic batteries (that achieve an output power of 2.23 nW) along with a full model that accurately simulates the device performance which is the highest to date (to the best of our knowledge) for GaN-based devices with a 63Ni source.
Bibliography:JPhysD-114548.R2
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aa9e41