Increase of electromechanical coupling coefficient kt2 in (0001)-oriented AlN films by chromium doping

Piezoelectric AlN films possess high bulk acoustic wave velocity, low acoustic attenuation, and good temperature characteristics. However, AlN film bulk acoustic wave resonators (FBARs) have a relatively small electromechanical coupling coefficient k eff 2. It was recently reported that Cr doping in...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 60; no. SD
Main Authors Takano, Yusei, Hayakawa, Ryusei, Suzuki, Masashi, Kakio, Shoji
Format Journal Article
LanguageEnglish
Published Tokyo Japanese Journal of Applied Physics 01.07.2021
Subjects
Acoustic attenuation
Acoustic waves
Acoustics
Chromium
Coupling coefficients
Doping
Piezoelectricity
Resonators
Wave attenuation
Wave velocity
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Summary:Piezoelectric AlN films possess high bulk acoustic wave velocity, low acoustic attenuation, and good temperature characteristics. However, AlN film bulk acoustic wave resonators (FBARs) have a relatively small electromechanical coupling coefficient k eff 2. It was recently reported that Cr doping in AlN films increased the piezoelectric constant d 33. The k t 2 of AlN FBARs may thus be enhanced by Cr doping. In this study, we investigated the effect of Cr doping in (0001)-oriented AlN films on k t 2 from the frequency characteristics of high overtone bulk acoustic wave resonators. k t 2 of the Cr-doped AlN films was increased for Cr contents of less than 3%. The maximum k t 2 observed for the Cr0.012Al0.088N film was 5.9%, which was approximately 1.4 times higher than that of pure AlN film (k t 2 = 4.4%).
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abef0c