Edge misfit dislocations in [Ge.sub.x][Si.sub.1-x]/Si interlayer in their formation

• Published in: Physics of the solid state Vol. 53; no. 9; pp. 1791 - 1797
• Main Authors: Bolkhovityanov, Yu.B, Gutakovskii, A.K, Deryabin, A.S, Sokolov, L.V
• Format: Journal Article
• Language: English
• Published: Springer 01.09.2011
• Subjects: Dislocations; Epitaxy
• ISSN: 1063-7834; 1090-6460
• DOI: 10.1134/S1063783411090083

The structure of dislocations in [Ge.sub.x][Si.sub.1-x](x ~ 0.4-0.8) films grown by molecular beam epitaxy on Si(001) substrates tilted by 6° toward the nearest (111) plane has been studied. The epitaxy of GeSi films on substrates deviating from the exact (001) orientation has allowed us to establish the main mechanism of formation of edge misfit dislocations (MDs), which most effectively (for heterostructures of the given composition) relieve stresses caused by the mismatch between lattice parameters of the film and substrate. Despite the edge MDs being defined as immobile (sessile) dislocations, their formation proceeds according to the gliding mechanism proposed by Kvam et al. [J. Mater. Res. 5, 1900 (1990)]. A comparative estimation of the propagation velocities of the primary and induced 60° dislocations, as well as the resulting 90° MDs, has been performed. It has been established that the condition providing for the most effective edge MD formation by the induced nucleation mechanism is the appearance of 60° MDs in a stressed film immediately after it reached a critical thickness. A source of these dislocations can be provided by a preliminarily grown buffer GeSi layer that occurs in a metastable state at the initial stage of plastic relaxation.