Structural, optical, and electrical characteristics of AlN:Ho thin films irradiated with 700keV protons

• Published in: Applied surface science Vol. 357; pp. 179 - 183
• Main Authors: Usman, Muhammad, Naeem, M., Hassan, Najam ul, Maqbool, Muhammad, Ahmad, Iftikhar, Ahmad, Ishaq, Hussain, Zahid
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2015
• Subjects: AlN:Ho; Band gap engineering; Band spectra; Defects; Irradiation; Proton Irradiation; Reflectivity; Rutherford backscattering spectroscopy; Thin films; X-ray photoelectron spectroscopy; X-rays; Band gap engineering; Proton Irradiation; AlN:Ho; Defects
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2015.09.033

•Irradiation effects of 700keV protons on AlN:Ho films were studied.•XPS is implemented to understand the surface and near surface effects of irradiation on AlN:Ho.•Bandgap of the subject material was observed to be changed after irradiation.•Electrical conductivity of the films is increased at highest doses. Effects of proton irradiation on Ho doped AlN thin films are investigated. The irradiation is performed in the dose range of 1013 to 1014ions/cm2 at room temperature. The effect of proton bombardment is studied through a systematic investigation of the structural properties using Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction (XRD), and X-ray Photoemission Spectroscopy (XPS). The optical properties and the band gap change after irradiation process are studied using Defuse Reflectance Spectroscopy (DRS) technique. The electrical behavior of the material is also investigated after irradiation of AlN:Ho. The results show that high-energy protons cause a band gap change in the material, which can be exploited in developing various applications.