Infrared spectroscopic analysis of reactively formed La-silicate interface layer at La2O3/Si substrates

Infrared spectroscopic analyses of reactively formed La-silicate gate dielectrics between La2O3 and Si substrates are conducted with the attenuated total reflection configuration. The formation of a La-silicate interface layer at the surface of Si(100) has been confirmed with an annealing temperatur...

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Bibliographic Details
Published inVacuum Vol. 140; pp. 14 - 18
Main Authors Kakushima, K., Seki, T., Wakabayashi, H., Tsutsui, K., Iwai, H.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.06.2017
Subjects
FTIR
High-k
Interface reaction
La-silicate
Interface reaction
High-k
La-silicate
FTIR
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Summary:Infrared spectroscopic analyses of reactively formed La-silicate gate dielectrics between La2O3 and Si substrates are conducted with the attenuated total reflection configuration. The formation of a La-silicate interface layer at the surface of Si(100) has been confirmed with an annealing temperature of 300 °C and the layer has grown with increasing the annealing temperature. The strain in the SiO4 tetrahedral network in the La-silicate interface layer, measured from longitudinal optical phonon vibration, showed relaxation when annealed at over 600 °C, suggesting a decrease in glass transition temperature owing to the presence of La atoms in the network. A strong correlation between the relaxation and the interface state density has been confirmed. The same relaxation trend with annealing temperature has been confirmed for Si(110) and (111) surfaces as well.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2016.11.017