Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of 1.55 μ m (Ga,In)(N,As) multiple quantum wells

• Published in: Journal of crystal growth Vol. 301; pp. 529 - 533
• Main Authors: Ishikawa, Fumitaro, Trampert, Achim, Ploog, Klaus H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2007; Elsevier
• Subjects: A3. Molecular beam epitaxy; A3. Semiconducting III–V materials; B3. Solid state lasers; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from vapor; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wells; Theory and models of film growth; 78.55.Cr; B3. Solid state lasers; 73.21.Fg; A3. Semiconducting III–V materials; 81.15.Hi; A3. Molecular beam epitaxy; Gallium; Pressure effects; Quantum wells; Photoluminescence; Multiple quantum well; Crystal growth from vapors; 73.21.Fg; 78.55.Cr; 81.15.Hi; A3. Molecular beam epitaxy; A3. Semiconducting III-V materials; B3. Solid state lasers; Low pressure; Growth mechanism; Molecular beam epitaxy; Nanostructured materials; Heterointerface; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.09.009

We investigate the molecular beam epitaxial growth (MBE) of (Ga,In)(N,As) multiple quantum wells at a low substrate temperature and under low As pressure. The advantages of this growth concept to achieve 1.55 μ m emissions are as follows: (i) the low growth temperature prevents composition modulations, leading to abrupt heterointerfaces; (ii) the low As pressure allows the introduction of a large amount of N in the layers due to the reduced competition for incorporation of group V elements; (iii) reducing the As pressure counteracts the effect of the low growth temperature, thus improving photoluminescence intensity. With this concept, (Ga,In)(N,As) quantum well emitting at 1.55 μ m are successfully grown in two MBE systems, equipped with different As source configurations.