Epitaxial growth of ferromagnetic δ -phase manganese gallium on semiconducting scandium nitride (0 0 1)
Ferromagnetic δ -phase manganese gallium layers with Mn / ( Mn + Ga ) = 60 % have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epitaxial relationship of manganese gallium with respect to scan...
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Published in | Journal of crystal growth Vol. 311; no. 8; pp. 2265 - 2268 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.04.2009
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Ferromagnetic
δ
-phase manganese gallium layers with
Mn
/
(
Mn
+
Ga
)
=
60
%
have been successfully grown on ScN(0
0
1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The
in-plane epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be
[
1
0
0
]
MnGa
/
/
[
1
1
0
]
ScN
and
[
1
1
0
]
MnGa
/
/
[
1
0
0
]
ScN
. Vibrating sample magnetometry measurements indicate
out-of-plane magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium
c
-axis. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2009.02.033 |