Epitaxial growth of ferromagnetic δ -phase manganese gallium on semiconducting scandium nitride (0 0 1)

Ferromagnetic δ -phase manganese gallium layers with Mn / ( Mn + Ga ) = 60 % have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epitaxial relationship of manganese gallium with respect to scan...

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Published inJournal of crystal growth Vol. 311; no. 8; pp. 2265 - 2268
Main Authors Wang, Kangkang, Chinchore, Abhijit, Lin, Wenzhi, Ingram, David C., Smith, Arthur R., Hauser, Adam J., Yang, Fengyuan
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.04.2009
Elsevier
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Summary:Ferromagnetic δ -phase manganese gallium layers with Mn / ( Mn + Ga ) = 60 % have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [ 1 0 0 ] MnGa / / [ 1 1 0 ] ScN and [ 1 1 0 ] MnGa / / [ 1 0 0 ] ScN . Vibrating sample magnetometry measurements indicate out-of-plane magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium c -axis.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2009.02.033