Hall effect in pinned and sliding states of NbSe3

We report the results of detailed investigations of Hall effect in NbSe3 under magnetic fields up to B=9T. We show that the Hall voltage, VH, changes sign in a wide temperature range and that the magnetic field for which VH crosses zero is temperature dependent. We demonstrate that in high magnetic...

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Published inPhysica. B, Condensed matter Vol. 404; no. 3-4; pp. 426 - 429
Main Authors Sinchenko, A.A., Monceau, P., Crozes, T., Chernikov, R.V., Ivanov, A.A.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.2009
Subjects
Charge-density-wave
Hall effect
Magnetoresistance
71.45.Lr
Hall effect
Charge-density-wave
Magnetoresistance
72.20.My
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Summary:We report the results of detailed investigations of Hall effect in NbSe3 under magnetic fields up to B=9T. We show that the Hall voltage, VH, changes sign in a wide temperature range and that the magnetic field for which VH crosses zero is temperature dependent. We demonstrate that in high magnetic field the CDW motion changes significantly the Hall voltage. These results indicate that, in NbSe3, the CDW in the sliding state interacts differently with electrons and holes.
Bibliography:SourceType-Scholarly Journals-2
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ObjectType-Conference Paper-1
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SourceType-Conference Papers & Proceedings-1
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ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2008.11.065