Muonium dynamics in doped Si probed by photoexcited TF- μ SR measurements

• Published in: Physica. B, Condensed matter Vol. 404; no. 5; pp. 852 - 855
• Main Authors: Fan, I., Chow, K.H., Egilmez, M., Hitti, B., Carroll, B.R., Vernon, J.E., Mansour, A.I., Scheuermann, R., Schultz, B.E., MacFarlane, W.A., Jung, J., Lichti, R.L.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Kidlington Elsevier B.V 15.04.2009; Elsevier
• Subjects: Charge-exchange; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states; Elemental semiconductors; Exact sciences and technology; Impurity and defect levels; Magnetic resonances and relaxations in condensed matter, mössbauer effect; Muon spin rotation and relaxation; Muon spin rotation/relaxation/resonance; Muonium; Photoexcitation; Physics; Muon spin rotation/relaxation/resonance; Charge-exchange; Muonium; Photoexcitation; Muon spin relaxation; Temperature effects; Doping; Illumination; Silicon; Charge transfer; Transverse field

Photoexcited TF- μ SR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently dop...