Muonium dynamics in doped Si probed by photoexcited TF- μ SR measurements

Photoexcited TF- μ SR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently dop...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 404; no. 5; pp. 852 - 855
Main Authors Fan, I., Chow, K.H., Egilmez, M., Hitti, B., Carroll, B.R., Vernon, J.E., Mansour, A.I., Scheuermann, R., Schultz, B.E., MacFarlane, W.A., Jung, J., Lichti, R.L.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Kidlington Elsevier B.V 15.04.2009
Elsevier
Subjects
Charge-exchange
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Elemental semiconductors
Exact sciences and technology
Impurity and defect levels
Magnetic resonances and relaxations in condensed matter, mössbauer effect
Muon spin rotation and relaxation
Muon spin rotation/relaxation/resonance
Muonium
Photoexcitation
Physics
Muon spin rotation/relaxation/resonance
Charge-exchange
Muonium
Photoexcitation
Muon spin relaxation
Temperature effects
Doping
Illumination
Silicon
Charge transfer
Transverse field
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Summary:Photoexcited TF- μ SR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently doped samples under both LF and TF configurations. In addition, the temperature dependence of Mu BC + in p-type Si suggests that the diamagnetic charge exchange processes are similar to that of intrinsic Si.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2008.11.154