Muonium dynamics in doped Si probed by photoexcited TF- μ SR measurements
Photoexcited TF- μ SR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently dop...
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Published in | Physica. B, Condensed matter Vol. 404; no. 5; pp. 852 - 855 |
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Main Authors | , , , , , , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Kidlington
Elsevier B.V
15.04.2009
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | Photoexcited TF-
μ
SR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently doped samples under both LF and TF configurations. In addition, the temperature dependence of
Mu
BC
+
in p-type Si suggests that the diamagnetic charge exchange processes are similar to that of intrinsic Si. |
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2008.11.154 |