Mass-separated broad beam ion implantation of 25 keV N + in titanium

A very compact arrangement consisting of a broad beam ion source (Kaufman ion source) followed by a newly developed radio-frequency bandpass mass separator, was used to generate a mass-separated broad ion beam with an ion energy of 500 eV. After this a second ion acceleration to 25 keV was carried o...

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Bibliographic Details
Published inSurface & coatings technology Vol. 97; no. 1; pp. 259 - 262
Main Authors Schlemm, H., Buchmann, F.
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 1997
Elsevier
Subjects
Applied sciences
Broad ion beam
Exact sciences and technology
Ion implantaion
Metals. Metallurgy
Other surface treatments
Production techniques
Radio-frequency mass filter
Surface treatment
Titanium nitride
Titanium nitride
Radio-frequency mass filter
Broad ion beam
Ion implantaion
Ion implantation
Rutherford backscattering
Ion source
Nitrogen ion
Transition metal
Experimental study
Radiofrequency
Surface treatment
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Summary:A very compact arrangement consisting of a broad beam ion source (Kaufman ion source) followed by a newly developed radio-frequency bandpass mass separator, was used to generate a mass-separated broad ion beam with an ion energy of 500 eV. After this a second ion acceleration to 25 keV was carried out at the gap to the substrate, combined with a defined broadening of the diameter of the ion beam. A titanium layer of 300 nm thickness on a silicon substrate was implanted with N + at a dose range of 10 15–5×10 17 cm −2. Rutherford backscattering and thermal waves analyses showed the implanted depth profiles.
ISSN:0257-8972
1879-3347
DOI:10.1016/S0257-8972(97)00195-3