200 mm GaAs crystal growth by the temperature gradient controlled LEC method

• Published in: Journal of crystal growth Vol. 225; no. 2-4; pp. 561 - 565
• Main Authors: Seidl, A., Eichler, S., Flade, T., Jurisch, M., Köhler, A., Kretzer, U., Weinert, B.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2001; Elsevier
• Subjects: A1. Characterization; A1. Computer simulation; A1. Heat transfer; A1. Interfaces; A2. Liquid encapsulated Czochralski method; B2. Semiconducting gallium arsenide; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics; A1.Heat transfer; 81.10Fq; A1.Computer simulation; B2.Semiconducting gallium arsenide; 81; A1.Characterization; 81.05.Ea; A1.Interfaces; A2. Liquid encapsulated Czochralski method; Temperature distribution; Gallium arsenides; Large dimension; Inorganic compounds; Electrical conductivity; Thermal method; Process control; Temperature gradients; Digital simulation; Czochralski method; Finite volume method; Experimental study; Spatial distribution; Wafers; Liquid encapsulation; Heat transfer; Crystal growth from melts; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)00953-8

This paper presents first results of 200mm diameter semi-insulating (SI) GaAs crystal growth experiments. The LEC method was used on condition that temperature gradients in critical regions can be controlled adequately. For furnace design and process parameter evaluation, powerful numerical simulation was indispensable. The structural and electrical properties of crystals grown by this temperature gradient controlled LEC method are similar to those known for state-of-the-art 150mm SI GaAs crystals.