Photodetector arrays from 100 mm diameter InGaAs/InP epitaxial wafers

• Published in: Journal of crystal growth Vol. 222; no. 4; pp. 693 - 696
• Main Authors: Olsen, G.H., Dixon, P.E., Lange, M.J., Sudol, J.J., Cohen, M.J., Sugg, A.R., Dries, J.C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 2001; Elsevier
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Indium phosphide; Optoelectronic devices; Organometallic vapor-phase epitaxy; Photodetector; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Substrate; Substrate; 85.60.Gz; Organometallic vapor-phase epitaxy; Photodetector; Indium phosphide; 81.05.Ea; Ternary compound; Array; Gallium arsenides; Manufacturing process; MOVPE method; Photoluminescence; Focal plane array; Crystal perfection; Indium arsenides
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(00)00939-8

Low dark current (210 nA/cm 2 at −1 V), high shunt resistance area product (0.3 MΩ cm 2) photodetector arrays have been fabricated on 100 mm diameter InGaAs/InP epitaxial wafers. The lattice-matched In .53Ga .47As was deposited by organometallic vapor-phase epitaxy upon sulfur-doped InP substrates. High-quality surface appearance and good uniformity of X-ray and photoluminescence intensity and wavelength were observed. Over 360 linear arrays of 256 or 512-element devices can be obtained from these 100 mm diameter wafers and represent more than a four-fold yield increase over that obtained with current industry standard of 50 mm diameter wafers. Good results from 320×240 element InGaAs/InP focal plane arrays fabricated on 75 mm diameter substrates were also obtained.