High (111) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer

[Display omitted] High (111) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlOx interlayer. To improve the quality of poly-Ge film, t...

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Published inMaterials research bulletin Vol. 72; pp. 60 - 63
Main Authors Wang, Peng, Li, Xin, Liu, Hanhui, Lai, Shumei, Chen, Yuye, Xu, Yihong, Chen, Songyan, Li, Cheng, Huang, Wei, Tang, Dingliang
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.12.2015
Subjects
A. Amorphous materials
A. Semiconductor
B. Epitaxial growth
B. Phase equilibria
A. Amorphous materials
A. Semiconductor
B. Epitaxial growth
B. Phase equilibria
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Summary:[Display omitted] High (111) orientation poly-Ge film was fabricated by Al induced crystallization (AIC), where Al and amorphous Ge (a-Ge) layers were continuously deposited by magnetron sputtering, avoiding the deliberate introduction of an AlOx interlayer. To improve the quality of poly-Ge film, the ratio of thicknesses of Al and a-Ge was adjusted. Electron backscattered diffraction (EBSD) results revealed that the (111) fraction of poly-Ge film reached 97% and the average crystal grain size surpassed 100μm.
ISSN:0025-5408
1873-4227
DOI:10.1016/j.materresbull.2015.07.037