p-Type CuBi2O4 thin films prepared by flux-mediated one-pot solution process with improved structural and photoelectrochemical characteristics

The flux-mediated one-pot solution process based on the metal-organic decomposition (MOD) has been developed for the preparation of p-type complex oxide semiconductor CuBi2O4 thin films. The precursor solutions with the various concentrations (0.5, 2, 5, and 10mol% vs. CuBi2O4) of aliovalent Li(I) f...

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Bibliographic Details
Published inMaterials letters Vol. 188; pp. 192 - 196
Main Authors Choi, Yun-Hyuk, Yang, Ki Dong, Kim, Dai-Hong, Nam, Ki Tae, Hong, Seong-Hyeon
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.02.2017
Subjects
CuBi2O4
Flux
Microstructure
Photoelectrochemistry
Solution process
Thin Films
Photoelectrochemistry
Flux
Microstructure
CuBi2O4
Thin Films
Solution process
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Summary:The flux-mediated one-pot solution process based on the metal-organic decomposition (MOD) has been developed for the preparation of p-type complex oxide semiconductor CuBi2O4 thin films. The precursor solutions with the various concentrations (0.5, 2, 5, and 10mol% vs. CuBi2O4) of aliovalent Li(I) flux produced the continuous and dense CuBi2O4 thin films with stoichiometric composition by facilitating the crystallization from the liquid precursor solution. These films showed the high hole density and charge transfer characteristics, which lead to the high photoelectrochemical activity for water reduction. [Display omitted] •The flux-mediated one-pot solution process for CuBi2O4 thin films is developed.•The dense and continuous CuBi2O4 film is obtained with the aliovalent Li(I) flux.•CuBi2O4 films exhibit high photoelectrochemical activity for water reduction.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2016.10.124