Controlled synthesis of highly crystalline CVD-derived monolayer MoSe2 and shape evolution mechanism

• Published in: Materials letters Vol. 216; pp. 261 - 264
• Main Authors: Li, Yue, Wang, Fang, Tang, Dengxuan, Wei, Junqing, Li, Yi, Xing, Yupeng, Zhang, Kailiang
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2018
• Subjects: Chemical vapour deposition; Growth mechanism; Molybdenum diselenide; Semiconductors; Shape evolution; Transition metal dichalcogenides; Molybdenum diselenide; Shape evolution; Chemical vapour deposition; Semiconductors; Transition metal dichalcogenides; Growth mechanism
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2018.01.102

•Morphology-controlled synthesis of MoSe2 were achieved via H2 content engineering.•As-grown MoSe2 exhibited high quality and good electrical properties.•Growth mechanisms of various MoSe2 morphologies formation process was proposed. Ultrathin two-dimensional transition metal dichalcogenides (TMDCs) have shown significant potential for diverse applications in semiconductor industry. The controlled synthesis of TMDCs is a prerequisite for its potential application. Unfortunately, controllable synthesis is still a great challenge. Here, we report an experimental method to induce a broad range of morphologies in highly crystalline, monolayer MoSe2 thin films by H2 content engineering. A growth mechanism was proposed to clarify the formation process for variable-shaped MoSe2 crystals. We attributed the evolution in morphologies to a result of the variable growth rates of two types of terminations that occur under different growth conditions. Our work provides a foundation for the controlled synthesis of MoSe2, reveals the shape evolution of CVD-derived MoSe2 and broadens the application range based on its shape-dependent properties.