Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics

We report on the formation and optical characteristics of ridge waveguide structures containing quantum wires (QWRs). To form a waveguide, we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures ( T s), and introduction of...

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Bibliographic Details
Published inJournal of crystal growth Vol. 201; pp. 810 - 813
Main Authors Koshiba, S., Watanabe, S., Nakamura, Y., Yamauchi, M., Yoshita, M., Baba, M., Akiyama, H., Sakaki, H.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 1999
Subjects
Laser
MBE
Quantum wire
Ridge structure
61.16.Bg
78.55.Cr
MBE
Ridge structure
Laser
Quantum wire
81.15.Hi
78.45.+h
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Summary:We report on the formation and optical characteristics of ridge waveguide structures containing quantum wires (QWRs). To form a waveguide, we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures ( T s), and introduction of growth interruptions. Stimulated emission from these ridge QWR laser structures was observed at temperatures 4.7–290 K by optical pumping.
ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(98)01481-X