Ohmic contacts on p-GaN (Part II):: impact of semiconductor fabrication and surface treatment

The impact of p-GaN fabrication and epi-layer surface treatment on the resulting electrical properties of ohmic contacts has been investigated. The I– V characteristics of ohmic Ni/Au and Pd contacts were determined on tempered CTLM structures using five different types of p-GaN. Various surface tre...

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 4; no. 4; pp. 367 - 371
Main Authors Wenzel, Roland, Fischer, Gerhard G, Schmid-Fetzer, Rainer
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.08.2001
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Summary:The impact of p-GaN fabrication and epi-layer surface treatment on the resulting electrical properties of ohmic contacts has been investigated. The I– V characteristics of ohmic Ni/Au and Pd contacts were determined on tempered CTLM structures using five different types of p-GaN. Various surface treatments of p-GaN epi-layers were also studied. No material class (MBE, MOCVD) has been found to be superior to the other, although strong differences in electrical properties between the various sample types were obtained. In contrast to that, the impact of different surface treatment methods on the electrical contact properties was found to be low. However, some treatments damaged the p-GaN epi-layer heavily, no ohmic contacts could be obtained on these samples.
ISSN:1369-8001
1873-4081
DOI:10.1016/S1369-8001(00)00178-5