Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks

Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics...

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 70; pp. 260 - 264
Main Authors Kanashima, T., Yamashiro, R., Zenitaka, M., Yamamoto, K., Wang, D., Tadano, J., Yamada, S., Nohira, H., Nakashima, H., Hamaya, K.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.11.2017
Subjects
Epitaxial high-k gate insulator
Germanium
La2O3
Stacked structure
Epitaxial high-k gate insulator
Germanium
La2O3
Stacked structure
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Summary:Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic nature of capacitance-voltage (C-V) characteristics becomes negligibly small and the interface trap density (Dit) is estimated to be less than 1012cm−2eV−1 at around the midgap. We discuss a possible mechanism of the improvement of the electrical properties.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2016.11.016