A study of ultrasonic spray pyrolysis deposited rutile-TiO2-based metal-semiconductor-metal ultraviolet photodetector

This work uses ultrasonic spray pyrolysis deposition to grow the TiO2 film on a Si substrate. The TiO2 film was annealed at 800°C for 2h to form rutile phase. X-ray diffraction, Raman spectrum, X-ray photoelectron spectroscopy were used to characterized rutile phase TiO2. The optical characteristics...

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 57; pp. 90 - 94
Main Authors Liu, Han-Yin, Lin, Wei-Hsun, Sun, Wen-Ching, Wei, Sung-Yen, Yu, Sheng-Min
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.2017
Subjects
Metal-semiconductor-metal (MSM)
Photodetector
Rutile
Titanium dioxide (TiO2)
Ultraviolet
Metal-semiconductor-metal (MSM)
Ultraviolet
Rutile
Photodetector
Titanium dioxide (TiO2)
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Summary:This work uses ultrasonic spray pyrolysis deposition to grow the TiO2 film on a Si substrate. The TiO2 film was annealed at 800°C for 2h to form rutile phase. X-ray diffraction, Raman spectrum, X-ray photoelectron spectroscopy were used to characterized rutile phase TiO2. The optical characteristics like refractive index, extinction coefficient and absorption coefficient were measured. The rutile TiO2-based metal-semiconductor-metal ultraviolet photodetector was fabricated and investigated, including current-voltage characteristic, photoresponsivity, external quantum efficiency, response time, noise equivalent power, and detectivity.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2016.10.005