Characterisation of a pixel sensor in 0.20 μ m SOI technology for charged particle tracking

This paper presents the results of the characterisation of a pixel sensor manufactured in 0.2 μ m SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 Ge...

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Bibliographic Details
Published inNuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Vol. 654; no. 1; pp. 258 - 265
Main Authors Battaglia, Marco, Bisello, Dario, Contarato, Devis, Denes, Peter, Giubilato, Piero, Mattiazzo, Serena, Pantano, Devis, Zalusky, Sarah
Format Journal Article
LanguageEnglish
Published Elsevier B.V 21.10.2011
Subjects
CMOS technology
Monolithic pixel sensor
Particle detection
SOI
Particle detection
CMOS technology
SOI
Monolithic pixel sensor
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Summary:This paper presents the results of the characterisation of a pixel sensor manufactured in 0.2 μ m SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2011.05.081