MoS2 gas sensor functionalized by Pd for the detection of hydrogen
•We fabricated a sensor with high sensitivity toward H2.•It was prepared by drop-casting MoS2 solution and functionalization with Pd nanodots.•Upon H2 exposure, Pd was converted to Pd-hydride with lower work function than MoS2.•Pristine MoS2 showed no change when exposed to a 1% hydrogen-containing...
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Published in | Sensors and actuators. B, Chemical Vol. 250; pp. 686 - 691 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.10.2017
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Subjects | |
Online Access | Get full text |
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Summary: | •We fabricated a sensor with high sensitivity toward H2.•It was prepared by drop-casting MoS2 solution and functionalization with Pd nanodots.•Upon H2 exposure, Pd was converted to Pd-hydride with lower work function than MoS2.•Pristine MoS2 showed no change when exposed to a 1% hydrogen-containing gas.•However, functionalized MoS2 showed a 35.3% resistance change.
A facile, scalable and low-cost strategy for fabricating hydrogen sensors with few-layered Pd-functionalized MoS2 according to a simple solution process is reported. The sensors were prepared by drop-casting a MoS2-containing solution onto a SiO2 substrate and functionalizing the surface of the MoS2 with Pd using evaporation. Patterned deposition of Cr/Au on top of the MoS2-coated SiO2 substrate was then performed using evaporation through a shadow mask to place the micro electrodes on the substrate. The fabricated Pd-MoS2 sensors successfully detected hydrogen gas diluted by air at room temperature. With exposure to hydrogen gas, the Pd was converted to palladium hydride, which has a lower work function than MoS2, resulting in the transfer of electrons from palladium hydride to MoS2, thereby decreasing the resistance of the sensor. The functionalized MoS2 showed a 35.3% resistance change when exposed to a 1% hydrogen-containing gas, while the pristine MoS2 showed no reaction. The lower limit of detection of the resulting functionalized MoS2 sensor was 50ppm. |
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ISSN: | 0925-4005 1873-3077 |
DOI: | 10.1016/j.snb.2017.05.028 |