Preparation of SiOxNy films by reactive KrF laser ablation

Various SiOxNy films were prepared from Si3N4 target by reactive KrF laser ablation under various oxygen pressures (10−7 ∼ 10−2 Torr). Oxygen content in these films increased and nitrogen content decreased with increasing oxygen pressure. A composite film piled with various SiOxNy layers was prepare...

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Bibliographic Details
Published inApplied surface science Vol. 96-98; pp. 764 - 768
Main Authors Maruyama, Kazunori, Aoki, Yasushi, Matsumoto, Masunori, Hiroshima, Yasushi, Ohta, Hiroshi
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 02.04.1996
Elsevier Science
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Laser deposition
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Oxynitrides
Inorganic compounds
Silicon oxides
Ternary compounds
Silicon nitrides
Laser ablation technique
Experimental study
Oxygen pressure
Pulsed lasers
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Summary:Various SiOxNy films were prepared from Si3N4 target by reactive KrF laser ablation under various oxygen pressures (10−7 ∼ 10−2 Torr). Oxygen content in these films increased and nitrogen content decreased with increasing oxygen pressure. A composite film piled with various SiOxNy layers was prepared by KrF laser irradiation onto Si3N4 target for 2.5 min with increasing oxygen pressure stepwise gradually from 10−7 to 10−2 Torr.
ISSN:0169-4332
1873-5584
DOI:10.1016/0169-4332(95)00551-X