Line edge roughness investigation on chemically amplified resist materials with masked helium ion beam lithography

We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 73; pp. 252 - 258
Main Authors Eder-Kapl, Stefan, Loeschner, Hans, Zeininger, Michalea, Fallmann, Wolfgang, Kirch, Oliver, Patsis, George P., Constantoudis, V., Gogolides, Evangelos
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.06.2004
Subjects
Analysis of variance
Ion beam lithography
Line edge roughness
Scaling analysis
Shot noise
Line edge roughness
Ion beam lithography
Shot noise
Scaling analysis
Analysis of variance
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Summary:We conducted line edge roughness (LER) measurements on resists with various sensitivities, exposed with a 75 keV 1:1 masked ion beam lithography tool. The critical dimension measurement data were treated with an algorithm for separation of mask induced roughness from random LER. The scaling analysis approach provided the correlation length and the roughness exponent. The results indicate that for exposure doses >2.5 μC/cm 2 LER is not governed by shot noise but by the resist material properties (sensitivity, molecular weight, acid diffusion length) and development conditions.
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ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2004.02.049