Lattice-constant-adaptable crystallographics: III. Heteroepitaxial phenomena of semiconductors on garnets; an experimental verification

• Published in: Journal of crystal growth Vol. 102; no. 4; pp. 1014 - 1034
• Main Authors: Haisma, Jan, Daams, Jo L.C., de Jong, A.Frank, Koek, Bert H., Maes, Johannes W.F., Mateika, Dieter, Pistorius, Jan A., Roksnoer, Piet J.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.1990
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(90)90871-H

Heteroepitaxial growth on small areas of a few square microns of GaAs and InP on lattice-constant-adapted garnets is studied. Lattice-matching theory and results deduced from transmission-electron-microscopic (TEM) lattice images are compared. It is shown that for the heteroepitaxial examples realized by organometallic chemical vapour deposition (OMCVD), the cross-sectional lattice-matching relations, expressed in interplanar distances, do not deviate more than 0.1% from theory. Generally, accurate measurements of interplanar distances (observed on TEM photographs) are in agreement with theory within experimental error. Curiously enough, in two cases marked exceptions from theoretical expectations are found (in TEM images) where the rest is in agreement with theory. Phenomenological details of this novel phenomenon will be presented as well as a model which incorporates all deviations found on the TEM lattice images. We have coined for this material composition the term “superstructure of shifted sublattices” (SSS).