High-performance C 60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

• Published in: Organic electronics Vol. 10; no. 3; pp. 432 - 436
• Main Authors: Kaji, Yumiko, Mitsuhashi, Ryoji, Lee, Xuesong, Okamoto, Hideki, Kambe, Takashi, Ikeda, Naoshi, Fujiwara, Akihiko, Yamaji, Minoru, Omote, Kenji, Kubozono, Yoshihiro
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2009
• Subjects: Bottom contact structure; C 60; Conducting polymer electrodes; Organic thin film transistors; Picene; 81.05.Lg; Bottom contact structure; Conducting polymer electrodes; 73.61.Ph; 73.61.Wp; C 60; Organic thin film transistors; Picene
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2009.01.006

C 60 and picene thin film field-effect transistors (FETs) in bottom contact structure have been fabricated with poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) electrodes for a realization of mechanical flexible organic FETs. The C 60 thin film FETs showed n-channel enhancement-type characteristics with the field-effect mobility μ value of 0.41 cm 2 V −1 s −1, while the picene thin film FET showed p-channel enhancement-type characteristics with the μ of 0.61 cm 2 V −1 s −1. The μ values recorded for C 60 and picene thin film FETs are comparable to those for C 60 and picene thin film FETs with Au electrodes.