Oxygen grafting and etching of hexatriacontane in late N 2–O 2 post-discharges

Treatments of the hexatriacontane at 330 K (HTC–C 36H 74) in late N 2–O 2 remote microwave plasmas under 400 Pa is presented in this work. Time evolutions of the mass of the HTC are reported as a function of the gas composition and correlation with the HTC compositions by chemical analyses is carrie...

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Bibliographic Details
Published inThin solid films Vol. 506; pp. 212 - 216
Main Authors Hody, V., Belmonte, T., Czerwiec, T., Henrion, G., Thiebaut, J.M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 26.05.2006
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Summary:Treatments of the hexatriacontane at 330 K (HTC–C 36H 74) in late N 2–O 2 remote microwave plasmas under 400 Pa is presented in this work. Time evolutions of the mass of the HTC are reported as a function of the gas composition and correlation with the HTC compositions by chemical analyses is carried out. The nitrogen atoms alone have no significant effect on the hexatriacontane. On the contrary, oxygen late post-discharges can be as efficient as direct plasma treatments to etch the HTC. In N 2–O 2 post-discharges, grafting and etching occur during a single experiment. However, the role of the oxygen atoms seems to be strongly correlated with the functionalization of the HTC and not clearly with its etching.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2005.08.016