Fabrication of Cu(In, Ga)Se 2 thin film solar cell absorbers from electrodeposited bilayers
CuInSe 2 (CIS) and Cu(In, Ga)Se 2 (CIGS) films as solar cell absorbers have been fabricated from electrodeposited (ED) In–Se/CIS and CIS/CuGaSe 2 (CGS) bilayers, respectively. Firstly, In–Se/CIS bilayers were intermixed by annealing at 600 °C for 10 min and it followed that CIS films with large grai...
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Published in | Current applied physics Vol. 10; no. 2; pp. S146 - S149 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.03.2010
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Subjects | |
Online Access | Get full text |
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Summary: | CuInSe
2 (CIS) and Cu(In,
Ga)Se
2 (CIGS) films as solar cell absorbers have been fabricated from electrodeposited (ED) In–Se/CIS and CIS/CuGaSe
2 (CGS) bilayers, respectively. Firstly, In–Se/CIS bilayers were intermixed by annealing at 600
°C for 10
min and it followed that CIS films with large grains and controlled compositional ratios were realized. CIS solar cells using these films showed around 2.2% efficiency. Next, CIS/CGS bilayers were annealed at 600
°C for 60
min for intermixing. Here, oxygen-free CGS films prepared from Cu–Ga–Se solution added Li
2SO
4 as the supporting electrolyte were used because Ga–O compound formed in ED-CGS films worked as the defects. As the results, around 2.9% efficiency CIGS solar cell using the films was realized. Especially, 29.7
mA/cm
2 and 36.1
mA/cm
2 high short-circuit current density were obtained in the CIS and CIGS solar cells, respectively. These results indicate that ED-bilayers technique is useful to realize low-cost and high efficiency solar cell. |
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ISSN: | 1567-1739 1878-1675 |
DOI: | 10.1016/j.cap.2009.11.022 |