The study of optimal oxidation time and different temperatures for high quality VO 2 thin film based on the sputtering oxidation coupling method

• Published in: Applied surface science Vol. 257; no. 21; pp. 8824 - 8827
• Main Authors: Xu, Xiaofeng, He, Xinfeng, Wang, Gang, Yuan, Xiaolong, Liu, Xingxing, Huang, Haiyan, Yao, Sheng, Xing, Huaizhong, Chen, Xiaoshuang, Chu, Junhao
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.08.2011
• Subjects: Optimal oxidation time; Sputtering oxidation coupling; Temperature; Vanadium dioxide; Temperature; Sputtering oxidation coupling; Vanadium dioxide; Optimal oxidation time
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2011.04.068

► The VO 2 thin film was deposited by a novel sputtering oxidation coupling method. ► The relationship between oxidation time and temperature 1/ T is in agreement with Wagner's model. ► The oxidation time as a function temperature 1/ T presents a linear relationship among 703 K–783 K. The high quality Vanadium dioxide (VO 2) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO 2 thin film samples exhibit a good metal–insulator transition (MIT) at about 340 K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101 nm thickness by oxidation in air. It is found that the optimal oxidation time ln( t) as a function of temperature 1/ T shows a significant linear relationship among 703 K–783 K, in good agreement with the Wagner's high-temperature oxidation model.